EMP103 specifications are subjec t to change without notice. excelics semiconductor, inc. 310 de guigne drive, sunnyvale, ca 94085 page 1 of 2 phone: 408-737-1711 fax: 408-737-1868 web: www.excelics.com revised july 2004 issued date: 07-12-04 6.4 ? 8. 0 ghz power amplifier mmic dimension: 2200um x 3000um thickness: 65um + 15um features ? 6.4 ? 8.0 ghz operating frequency range ? 32.5dbm output power at 1db compression ? 15.0 db typical small signal gain ? -40dbc oimd3 @each tone pout 22dbm applications ? point-to-point and point-to-multipoint radio ? military radar systems caution! esd sensitive device. electrical characteristics (t a = 25 c, 50 ohm, vdd=10v, idq=1000ma) symbol parameter/test conditions min typ max units f operating frequency range 6.4 8.0 ghz p1db output power at 1db gain compression 31.5 32.5 dbm gss small signal gain 13.0 15.0 db oimd3 output 3 rd order intermodulation distortion @ ? f=10mhz, each tone pout 22dbm -40.0 dbc input rl input return loss -15 -10 db output rl output return loss -6 db idss saturate drain current v ds =3v, v gs =0v 1680 ma v dd power supply voltage 10 v rth thermal resistance (au-sn eutectic attach) 7 o c/w tb operating base plate temperature - 35 + 80 oc absolute maximum ratings for continuous operation 1,2 symbol characteristic value v ds drain to source voltage 10v v gs gate to source voltage - 4v i dd drain current idss i gsf forward gate current 35 ma p in input power @ 3db compression t ch channel temperature 150c t stg storage temperature -65/150c p t total power dissipation 17w 1. operating the device beyond any of the above rating may result in permanent damage. 2. bias conditions must also satisfy the following equation v ds *i ds < (t ch ?t hs )/r th ; where t hs = ambient temperature
EMP103 specifications are subjec t to change without notice. excelics semiconductor, inc. 310 de guigne drive, sunnyvale, ca 94085 page 2 of 2 phone: 408-737-1711 fax: 408-737-1868 web: www.excelics.com revised july 2004 issued date: 07-12-04 6.4 ? 8. 0 ghz power amplifier mmic assembly drawing chip outline typical performance 5 6 7 8 9 frequency (ghz) small signal performance -20 -15 -10 -5 0 5 10 15 20 db[s21] db[s11] db[s22] data measured @ vd=10v, id=950ma all dimensions in microns p1db performance 30 30.5 31 31.5 32 32.5 33 33.5 34 34.5 35 56789 frequency (ghz) dbm
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